Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ886EP-T1_GE3

SQJ886EP-T1_GE3

SQJ886EP-T1_GE3

Part NumberSQJ886EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 60A PPAK SO-8

DatasheetSQJ886EP-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 60A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ886EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ886EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ886EP-T1_GE3.
We are offering SQJ886EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ886EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ886EP-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2922pF @ 20V
FET Feature	-
Power Dissipation (Max)	55W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ886EP-T1_GE3 - Related Products

	DMTH6010SK3Q-13	Diodes Incorporated, N-Channel 60V 16.3A (Ta), 70A (Tc) 3.1W (Ta) Surface Mount TO-252-4L, Automotive, AEC-Q101	View
	BUK9628-55A,118	Nexperia USA Inc., N-Channel 55V 42A (Tc) 99W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	BSS123WQ-7-F	Diodes Incorporated, N-Channel 100V 170mA (Ta) 200mW (Ta) Surface Mount SOT-323,	View
	IRLR7807ZTRPBF	Infineon Technologies, N-Channel 30V 43A (Tc) 40W (Tc) Surface Mount D-Pak, HEXFET®	View
	IRFB4019PBF	Infineon Technologies, N-Channel 150V 17A (Tc) 80W (Tc) Through Hole TO-220AB,	View
	BSC12DN20NS3GATMA1	Infineon Technologies, N-Channel 200V 11.3A (Tc) 50W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	PSMN025-80YLX	Nexperia USA Inc., N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	STB9NK60ZT4	STMicroelectronics, N-Channel 600V 7A (Tc) 125W (Tc) Surface Mount D2PAK, SuperMESH™	View
	IXFN48N50	IXYS, N-Channel 500V 48A (Tc) 520W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	IRF7403TRPBF	Infineon Technologies, N-Channel 30V 8.5A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	STB120NF10T4	STMicroelectronics, N-Channel 100V 110A (Tc) 312W (Tc) Surface Mount D2PAK, STripFET™ II	View
	DMT6009LK3-13	Diodes Incorporated, N-Channel 60V 13.3A (Ta), 57A (Tc) 2.6W (Ta) Surface Mount TO-252,	View

SQJ886EP-T1_GE3 - Tags

SQJ886EP-T1_GE3 SQJ886EP-T1_GE3 PDF SQJ886EP-T1_GE3 datasheet SQJ886EP-T1_GE3 specification SQJ886EP-T1_GE3 image SQJ886EP-T1_GE3 India Renesas Electronics India SQJ886EP-T1_GE3 buy SQJ886EP-T1_GE3 SQJ886EP-T1_GE3 price SQJ886EP-T1_GE3 distributor SQJ886EP-T1_GE3 supplier SQJ886EP-T1_GE3 wholesales