IRFH5210TRPBF

Part NumberIRFH5210TRPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFH5210PBF
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	14.9mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2570pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerVDFN

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