SQM120P10_10M1LGE3
SQM120P10_10M1LGE3
Part Number SQM120P10_10M1LGE3
Description MOSFET P-CH 100V 120A TO263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
To learn about the specification of SQM120P10_10M1LGE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQM120P10_10M1LGE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQM120P10_10M1LGE3.
We are offering SQM120P10_10M1LGE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQM120P10_10M1LGE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM120P10_10M1L
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SQM120P10_10M1LGE3 - Related ProductsMore >>
DMG2301L-7
Diodes Incorporated, P-Channel 20V 3A (Ta) 1.5W (Ta) Surface Mount SOT-23,
View
IRF9Z34PBF
Vishay Siliconix, P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB,
View
MTM981400BBF
Panasonic Electronic Components, P-Channel 40V 7A (Ta) 2W (Ta) Surface Mount SO8-F1-B,
View
FQB34P10TM
ON Semiconductor, P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
ZXMP10A13FTA
Diodes Incorporated, P-Channel 100V 600mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,
View
TP0620N3-G
Microchip Technology, P-Channel 200V 175mA (Tj) 1W (Ta) Through Hole TO-92-3,
View
SI4421DY-T1-GE3
Vishay Siliconix, P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
CSD25484F4T
Texas Instruments, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
IRFR6215TRPBF
Infineon Technologies, P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
View
SI1467DH-T1-GE3
Vishay Siliconix, P-Channel 20V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®
View
RSU002P03T106
Rohm Semiconductor, P-Channel 30V 250mA (Ta) 200mW (Ta) Surface Mount UMT3,
View
RZF030P01TL
Rohm Semiconductor, P-Channel 12V 3A (Ta) 800mW (Ta) Surface Mount TUMT3,
View
SQM120P10_10M1LGE3 - Tags