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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQR50N04-3M8
Standard Package 2000
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6700pF @ 25V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-4, DPak (3 Leads + Tab)
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Toshiba Semiconductor and Storage, N-Channel 30V 15A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSIX-H
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Infineon Technologies, N-Channel 40V 12A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
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Vishay Siliconix, N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263),
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