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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQR70090ELR
Standard Package 2000
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-4, DPak (3 Leads + Tab)
SIR872ADP-T1-GE3
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Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Tc) 30W (Tc) Surface Mount DPAK, DTMOSV
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Infineon Technologies, N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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Diodes Incorporated, N-Channel 50V 300mA (Ta) 250mW (Ta) Surface Mount SOT-323,
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BUK6610-75C,118
Nexperia USA Inc., N-Channel 75V 78A (Tc) 158W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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Infineon Technologies, N-Channel 60V 18.5A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2),
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STMicroelectronics, N-Channel 950V 8A (Tc) 130W (Tc) Through Hole TO-247, SuperMESH5™
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IAUC120N04S6L008ATMA1
Infineon Technologies, N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-33, Automotive, AEC-Q101, OptiMOS™
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SUP70030E-GE3
Vishay Siliconix, N-Channel 100V 150A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®
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SUD19N20-90-E3
Vishay Siliconix, N-Channel 200V 19A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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