Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQS423EN-T1_GE3

SQS423EN-T1_GE3

SQS423EN-T1_GE3

Part NumberSQS423EN-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 16A POWERPAK1212

DatasheetSQS423EN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SQS423EN-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQS423EN-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQS423EN-T1_GE3.
We are offering SQS423EN-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQS423EN-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQS423EN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	21mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1975pF @ 15V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SQS423EN-T1_GE3 - Related Products

	IRLML5103TRPBF	Infineon Technologies, P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	SSM6J216FE,LF	Toshiba Semiconductor and Storage, P-Channel 12V 4.8A (Ta) 700mW (Ta) Surface Mount ES6, U-MOSVI	View
	CWDM3011P TR13	Central Semiconductor Corp, P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View
	DMP2007UFG-7	Diodes Incorporated, P-Channel 20V 18A (Ta), 40A (Tc) 2.3W (Ta) Surface Mount PowerDI3333-8,	View
	FDMC5614P	ON Semiconductor, P-Channel 60V 5.7A (Ta), 13.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	IRF9510SPBF	Vishay Siliconix, P-Channel 100V 4A (Tc) 43W (Tc) Surface Mount,	View
	IRFR6215TRLPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	DMP4010SK3Q-13	Diodes Incorporated, P-Channel 40V 15A (Ta), 50A (Tc) 1.7W (Ta) Surface Mount TO-252,	View
	BSL207SPH6327XTSA1	Infineon Technologies, P-Channel 20V 6A (Ta) 2W (Ta) Surface Mount PG-TSOP-6-6, OptiMOS™	View
	SQ3461EV-T1_GE3	Vishay Siliconix, P-Channel 12V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®	View
	SI8819EDB-T2-E1	Vishay Siliconix, P-Channel 12V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8),	View
	SI3457CDV-T1-E3	Vishay Siliconix, P-Channel 30V 5.1A (Tc) 3W (Tc) Surface Mount 6-TSOP, TrenchFET®	View

SQS423EN-T1_GE3 - Tags

SQS423EN-T1_GE3 SQS423EN-T1_GE3 PDF SQS423EN-T1_GE3 datasheet SQS423EN-T1_GE3 specification SQS423EN-T1_GE3 image SQS423EN-T1_GE3 India Renesas Electronics India SQS423EN-T1_GE3 buy SQS423EN-T1_GE3 SQS423EN-T1_GE3 price SQS423EN-T1_GE3 distributor SQS423EN-T1_GE3 supplier SQS423EN-T1_GE3 wholesales