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FDD306P

FDD306P

Part NumberFDD306P

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 12V 6.7A DPAK

DatasheetFDD306P

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 6.7A (Ta) 52W (Ta) Surface Mount TO-252

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FDD306P - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDD306P
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	28mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1290pF @ 6V
FET Feature	-
Power Dissipation (Max)	52W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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