Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQS481ENW-T1_GE3

SQS481ENW-T1_GE3

SQS481ENW-T1_GE3

Part NumberSQS481ENW-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 150V 4.7A 1212-8

DatasheetSQS481ENW

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 4.7A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SQS481ENW-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQS481ENW-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQS481ENW-T1_GE3.
We are offering SQS481ENW-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQS481ENW-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQS481ENW
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.095Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	385pF @ 75V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SQS481ENW-T1_GE3 - Related Products

	IRF6218STRLPBF	Infineon Technologies, P-Channel 150V 27A (Tc) 250W (Tc) Surface Mount D2PAK, HEXFET®	View
	SI2367DS-T1-GE3	Vishay Siliconix, P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	AUIRFR5410TRL	Infineon Technologies, P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-Pak, Automotive, AEC-Q101, HEXFET®	View
	IRF4905PBF	Infineon Technologies, P-Channel 55V 74A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	ZXMP6A17GTA	Diodes Incorporated, P-Channel 60V 3A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	SI8409DB-T1-E1	Vishay Siliconix, P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	IXTT90P10P	IXYS, P-Channel 100V 90A (Tc) 462W (Tc) Surface Mount TO-268, PolarP™	View
	DMP2021UFDF-7	Diodes Incorporated, P-Channel 20V 9A (Ta) 730mW (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	SQJ431EP-T1_GE3	Vishay Siliconix, P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SSM3J372R,LF	Toshiba Semiconductor and Storage, P-Channel 30V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SI1411DH-T1-GE3	Vishay Siliconix, P-Channel 150V 420mA (Ta) 1W (Ta) Surface Mount, TrenchFET®	View
	SI4435DDY-T1-E3	Vishay Siliconix, P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View

SQS481ENW-T1_GE3 - Tags

SQS481ENW-T1_GE3 SQS481ENW-T1_GE3 PDF SQS481ENW-T1_GE3 datasheet SQS481ENW-T1_GE3 specification SQS481ENW-T1_GE3 image SQS481ENW-T1_GE3 India Renesas Electronics India SQS481ENW-T1_GE3 buy SQS481ENW-T1_GE3 SQS481ENW-T1_GE3 price SQS481ENW-T1_GE3 distributor SQS481ENW-T1_GE3 supplier SQS481ENW-T1_GE3 wholesales