SIA485DJ-T1-GE3
SIA485DJ-T1-GE3
Part Number SIA485DJ-T1-GE3
Description P-CHANNEL 150-V (D-S) MOSFET
Package / Case PowerPAK® SC-70-6
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 150V 1.6A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single
To learn about the specification of SIA485DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA485DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA485DJ-T1-GE3.
We are offering SIA485DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIA485DJ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIA485DJ
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 75V
FET Feature -
Power Dissipation (Max) 15.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6
SIA485DJ-T1-GE3 - Related ProductsMore >>
DMG1013T-7
Diodes Incorporated, P-Channel 20V 460mA (Ta) 270mW (Ta) Surface Mount SOT-523,
View
BSS84PH6433XTMA1
Infineon Technologies, P-Channel 60V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
IRF9Z34PBF
Vishay Siliconix, P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB,
View
NTR5105PT1G
ON Semiconductor, P-Channel 60V 196mA (Ta) 347mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
FQP17P10
ON Semiconductor, P-Channel 100V 16.5A (Tc) 100W (Tc) Through Hole TO-220-3, QFET®
View
BSP170PH6327XTSA1
Infineon Technologies, P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
SQS401EN-T1_GE3
Vishay Siliconix, P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
FDN360P
ON Semiconductor, P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
BSR315PH6327XTSA1
Infineon Technologies, P-Channel 60V 620mA (Ta) 500mW (Ta) Surface Mount PG-SC-59, SIPMOS®
View
MCH6321-TL-E
ON Semiconductor, P-Channel 20V 4A (Ta) Surface Mount 6-MCPH,
View
FDC3535
ON Semiconductor, P-Channel 80V 2.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
View
IXTH24P20
IXYS, P-Channel 200V 24A (Tc) 300W (Tc) Through Hole TO-247 (IXTH),
View
SIA485DJ-T1-GE3 - Tags