SUD19P06-60-GE3
SUD19P06-60-GE3
Part Number SUD19P06-60-GE3 Description MOSFET P-CH 60V 18.3A TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252, (D-Pak)
To learn about the specification of SUD19P06-60-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SUD19P06-60-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SUD19P06-60-GE3.
We are offering SUD19P06-60-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SUD19P06-60-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SUD19P06-60 Standard Package 2000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 25V FET Feature - Power Dissipation (Max) 2.3W (Ta), 38.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SUD19P06-60-GE3 - Related ProductsMore >>
PMV33UPE,215 Nexperia USA Inc., P-Channel 20V 4.4A (Ta) 490mW (Ta) Surface Mount TO-236AB,
View
SSM3J140TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 4.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
SI2369DS-T1-GE3 Vishay Siliconix, P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236, TrenchFET®
View
DMP32D9UFZ-7B Diodes Incorporated, P-Channel 30V 200mA (Ta) 390mW (Ta) Surface Mount X2-DFN0606-3,
View
SI1443EDH-T1-GE3 Vishay Siliconix, P-Channel 30V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount, TrenchFET®
View
DMP1011UCB9-7 Diodes Incorporated, P-Channel 8V 10A (Ta) 890mW (Ta) Surface Mount U-WLB1515-9,
View
STR2P3LLH6 STMicroelectronics, P-Channel 30V 2A (Ta) 350mW (Tc) Surface Mount SOT-23, STripFET™ H6
View
SI3453DV-T1-GE3 Vishay Siliconix, P-Channel 30V 3.4A (Tc) 3W (Tc) Surface Mount 6-TSOP,
View
ATP106-TL-H ON Semiconductor, P-Channel 40V 30A (Ta) 40W (Tc) Surface Mount ATPAK,
View
IRF7404TRPBF Infineon Technologies, P-Channel 20V 6.7A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
CSD22202W15 Texas Instruments, P-Channel 8V 10A (Ta) 1.5W (Ta) Surface Mount 9-DSBGA, NexFET™
View
SSM3J64CTC,L3F Toshiba Semiconductor and Storage, P-Channel 12V 1A (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII
View
SUD19P06-60-GE3 - Tags
English
