Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQS482EN-T1_GE3

SQS482EN-T1_GE3

SQS482EN-T1_GE3

Part NumberSQS482EN-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 16A 1212-8

DatasheetSQS482EN-T1-GE3

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SQS482EN-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQS482EN-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQS482EN-T1_GE3.
We are offering SQS482EN-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQS482EN-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQS482EN-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1865pF @ 25V
FET Feature	-
Power Dissipation (Max)	62W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SQS482EN-T1_GE3 - Related Products

	ZXMN10A07FTA	Diodes Incorporated, N-Channel 100V 700mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	BSC026N02KSGAUMA1	Infineon Technologies, N-Channel 20V 25A (Ta), 100A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	NTTFS4C06NTWG	ON Semiconductor, N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	PSMN1R5-30BLEJ	Nexperia USA Inc., N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK,	View
	STP13NM60N	STMicroelectronics, N-Channel 600V 11A (Tc) 90W (Tc) Through Hole TO-220-3, MDmesh™ II	View
	DMT6009LSS-13	Diodes Incorporated, N-Channel 60V 10.8A (Ta) 1.25W (Ta) Surface Mount 8-SO,	View
	STW14NK50Z	STMicroelectronics, N-Channel 500V 14A (Tc) 150W (Tc) Through Hole TO-247-3, SuperMESH™	View
	STD65N55LF3	STMicroelectronics, N-Channel 55V 80A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™ III	View
	DMT6016LFDF-7	Diodes Incorporated, N-Channel 60V 8.9A (Ta) 820mW (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	IRFH5250DTRPBF	Infineon Technologies, N-Channel 25V 40A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	IRFU7440PBF	Infineon Technologies, N-Channel 40V 90A (Tc) 140W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	IRLR3636TRPBF	Infineon Technologies, N-Channel 60V 50A (Tc) 143W (Tc) Surface Mount D-Pak, HEXFET®	View

SQS482EN-T1_GE3 - Tags

SQS482EN-T1_GE3 SQS482EN-T1_GE3 PDF SQS482EN-T1_GE3 datasheet SQS482EN-T1_GE3 specification SQS482EN-T1_GE3 image SQS482EN-T1_GE3 India Renesas Electronics India SQS482EN-T1_GE3 buy SQS482EN-T1_GE3 SQS482EN-T1_GE3 price SQS482EN-T1_GE3 distributor SQS482EN-T1_GE3 supplier SQS482EN-T1_GE3 wholesales