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SQS966ENW-T1_GE3

SQS966ENW-T1_GE3

Part NumberSQS966ENW-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60V

DatasheetSQS966ENW

Package / CasePowerPAK® 1212-8W

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Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 60V 6A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8W

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SQS966ENW-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SQS966ENW
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Rds On (Max) @ Id, Vgs	36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	572pF @ 25V
Power - Max	27.8W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8W
Supplier Device Package	PowerPAK® 1212-8W

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SQS966ENW-T1_GE3 - Tags

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