SQSA80ENW-T1_GE3
SQSA80ENW-T1_GE3
Part Number SQSA80ENW-T1_GE3 Description MOSFET N-CH 80V 18A POWERPAK1212 Package / Case PowerPAK® 1212-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 80V 18A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SQSA80ENW-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQSA80ENW-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQSA80ENW-T1_GE3.
We are offering SQSA80ENW-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQSA80ENW-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQSA80ENW Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1358pF @ 40V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
SQSA80ENW-T1_GE3 - Related ProductsMore >>
DMN4800LSSL-13 Diodes Incorporated, N-Channel 30V 8A (Ta) 1.46W (Ta) Surface Mount 8-SO,
View
BSC110N06NS3GATMA1 Infineon Technologies, N-Channel 60V 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
View
IRFZ48NSTRLPBF Infineon Technologies, N-Channel 55V 64A (Tc) 3.8W (Ta), 130W (Tc) Surface Mount D2PAK, HEXFET®
View
STB21N90K5 STMicroelectronics, N-Channel 900V 18.5A (Tc) 250W (Tc) Surface Mount D2PAK, SuperMESH5™
View
IPB037N06N3GATMA1 Infineon Technologies, N-Channel 60V 90A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
SPW11N80C3FKSA1 Infineon Technologies, N-Channel 800V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
SI2312BDS-T1-GE3 Vishay Siliconix, N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
PMCM6501UNEZ Nexperia USA Inc., N-Channel 20V 400mW Surface Mount 6-WLCSP (1.48x.98),
View
STW11NM80 STMicroelectronics, N-Channel 800V 11A (Tc) 150W (Tc) Through Hole TO-247-3, MDmesh™
View
IRFB3306GPBF Infineon Technologies, N-Channel 60V 120A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®
View
TK7S10N1Z,LQ Toshiba Semiconductor and Storage, N-Channel 100V 7A (Ta) 50W (Tc) Surface Mount DPAK+, U-MOSVIII-H
View
SSM3K357R,LF Toshiba Semiconductor and Storage, N-Channel 60V 650mA (Ta) 1W (Ta) Surface Mount SOT-23F, π-MOSV
View
SQSA80ENW-T1_GE3 - Tags
English
