SSM3K376R,LF

Part NumberSSM3K376R,LF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM3K376R
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVII-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	56mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V
Vgs (Max)	+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 10V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	SOT-23F
Package / Case	SOT-23-3 Flat Leads

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