SSM6H19NU,LF


SSM6H19NU,LF

Part NumberSSM6H19NU,LF

Manufacturer

Description

Datasheet

Package / Case6-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SSM6H19NU,LF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVII-H
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 8V
Rds On (Max) @ Id, Vgs185mOhm @ 1A, 8V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs2.2nC @ 4.2V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds130pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-UDFN (2x2)
Package / Case6-UDFN Exposed Pad

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