Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM6J50TU
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSIV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2V, 4.5V
Rds On (Max) @ Id, Vgs	64mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200µA
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	UF6
Package / Case	6-SMD, Flat Leads

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SSM6J50TU,LF

Part NumberSSM6J50TU,LF