STB10LN80K5
STB10LN80K5
Part Number STB10LN80K5 Description MOSFET N-CHANNEL 800V 8A D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 8A (Tc) 110W (Tc) Surface Mount D2PAK
To learn about the specification of STB10LN80K5, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add STB10LN80K5 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of STB10LN80K5.
We are offering STB10LN80K5 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
STB10LN80K5 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB10LN80K5 Standard Package 1000 Manufacturer STMicroelectronics Series MDmesh™ K5 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 630mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 427pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB10LN80K5 - Related ProductsMore >>
TPN2R703NL,L1Q Toshiba Semiconductor and Storage, N-Channel 30V 45A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
View
IPA60R950C6XKSA1 Infineon Technologies, N-Channel 600V 4.4A (Tc) 26W (Tc) Through Hole PG-TO220-FP, CoolMOS™
View
R6024ENX Rohm Semiconductor, N-Channel 600V 24A (Tc) 40W (Tc) Through Hole TO-220FM,
View
SSM6K504NU,LF Toshiba Semiconductor and Storage, N-Channel 30V 9A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVII
View
FQA170N06 ON Semiconductor, N-Channel 60V 170A (Tc) 375W (Tc) Through Hole TO-3PN, QFET®
View
IXTT1N250HV IXYS, N-Channel 2500V 1.5A (Tc) 250W (Tc) Surface Mount TO-268,
View
TSM024NA04LCR RLG Taiwan Semiconductor Corporation, N-Channel 40V 170A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6),
View
AOD3N80 Alpha & Omega Semiconductor Inc., N-Channel 800V 2.8A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),
View
SIR680DP-T1-RE3 Vishay Siliconix, N-Channel 80V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
SI7892BDP-T1-GE3 Vishay Siliconix, N-Channel 30V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SIHP11N80E-GE3 Vishay Siliconix, N-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-220AB,
View
DMG2302U-7 Diodes Incorporated, N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount SOT-23-3,
View
STB10LN80K5 - Tags
English
