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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STP30NF20, STB30NF20, STW30NF20
Standard Package 1
Manufacturer STMicroelectronics
Series STripFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1597pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BSC050N03LSGATMA1
Infineon Technologies, N-Channel 30V 18A (Ta), 80A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
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STD4NK80ZT4
STMicroelectronics, N-Channel 800V 3A (Tc) 80W (Tc) Surface Mount DPAK, SuperMESH™
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CSD16321Q5
Texas Instruments, N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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SI1062X-T1-GE3
Vishay Siliconix, N-Channel 20V 220mW (Ta) Surface Mount SC-89-3, TrenchFET®
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VN2106N3-G
Microchip Technology, N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3,
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CSD18535KCS
Texas Instruments, N-Channel 60V 200A (Ta) 300W (Tc) Through Hole TO-220-3, NexFET™
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IRFB7730PBF
Infineon Technologies, N-Channel 75V 195A (Tc) 375W (Tc) Through Hole TO-220AB, HEXFET®
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STH410N4F7-6AG
STMicroelectronics, N-Channel 40V 200A (Tc) 365W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, STripFET™ F7
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STD8NM50N
STMicroelectronics, N-Channel 500V 5A (Tc) 45W (Tc) Surface Mount DPAK, MDmesh™ II
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IPB020N08N5ATMA1
Infineon Technologies, N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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FQB4N80TM
ON Semiconductor, N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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TK40A06N1,S4X
Toshiba Semiconductor and Storage, N-Channel 60V 40A (Tc) 30W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
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