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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB43N65M5
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 63mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Nexperia USA Inc., N-Channel 40V 100A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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Taiwan Semiconductor Corporation, N-Channel 650V 4A (Tc) 70W (Tc) Through Hole TO-251 (IPAK),
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SI7308DN-T1-E3
Vishay Siliconix, N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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