STD60NF06T4

Part NumberSTD60NF06T4

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Power MOSFET Selection Guide
Standard Package	2500
Manufacturer	STMicroelectronics
Series	STripFET™ II
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1810pF @ 25V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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DN2540N3-G-P003	Microchip Technology, N-Channel 400V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226),	View
STP100N6F7	STMicroelectronics, N-Channel 60V 100A (Tc) 125W (Tc) Through Hole TO-220, STripFET™ F7	View
TK34A10N1,S4X	Toshiba Semiconductor and Storage, N-Channel 100V 34A (Tc) 35W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
FDD9407L-F085	ON Semiconductor, N-Channel 40V 100A (Tc) 227W (Tj) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®	View
IRF135SA204	Infineon Technologies, N-Channel 135V 160A (Tc) 500W (Tc) Surface Mount D2PAK-7, HEXFET®, StrongIRFET™	View
SSM3K116TU,LF	Toshiba Semiconductor and Storage, N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSIII	View
SQJQ466E-T1_GE3	Vishay Siliconix, N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8, Automotive, AEC-Q101, TrenchFET®	View
IPD80R3K3P7ATMA1	Infineon Technologies, N-Channel 800V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
SI7308DN-T1-E3	Vishay Siliconix, N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
TSM2N7002KCX RFG	Taiwan Semiconductor Corporation, N-Channel 60V 300mA (Ta) 300mW (Ta) Surface Mount SOT-23,	View

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