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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STD64N4F6AG
Standard Package 2500
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, STripFET™ F6
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2415pF @ 25V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MMBF0201NLT1G
ON Semiconductor, N-Channel 20V 300mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),
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SI1480DH-T1-GE3
Vishay Siliconix, N-Channel 100V 2.6A (Tc) 1.5W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®
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SI4114DY-T1-E3
Vishay Siliconix, N-Channel 20V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®
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IRLH5030TRPBF
Infineon Technologies, N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®
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IXFP20N50P3
IXYS, N-Channel 500V 8A (Tc) 380W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™
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IXFK210N30X3
IXYS, N-Channel 300V 210A (Tc) 1250W (Tc) Through Hole TO-264, HiPerFET™
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STB6N65M2
STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Surface Mount D2PAK, MDmesh™
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IRF100B202
Infineon Technologies, N-Channel 100V 97A (Tc) 221W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
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STD11N65M2
STMicroelectronics, N-Channel 650V 7A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ II Plus
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SIHG21N60EF-GE3
Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-247AC,
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STH150N10F7-2
STMicroelectronics, N-Channel 100V 110A (Tc) 250W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII
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FDS5690
ON Semiconductor, N-Channel 60V 7A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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