Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	STG(B,W)30H60DLFB Datasheet
Standard Package	1
Manufacturer	STMicroelectronics
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
Power - Max	260W
Switching Energy	393µJ (off)
Input Type	Standard
Gate Charge	149nC
Td (on/off) @ 25°C	-/146ns
Test Condition	400V, 30A, 10Ohm, 15V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK

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FGH60N60SFTU	ON Semiconductor, IGBT Field Stop 600V 120A 378W Through Hole TO-247-3,	View
IRGB15B60KDPBF	Infineon Technologies, IGBT NPT 600V 31A 208W Through Hole TO-220AB,	View
RGT50NL65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 48A 194W Surface Mount LPDS,	View
STGW30NC120HD	STMicroelectronics, IGBT 1200V 60A 220W Through Hole TO-247-3, PowerMESH™	View
IRG4PSH71KDPBF	Infineon Technologies, IGBT 1200V 78A 350W Through Hole SUPER-247™ (TO-274AA),	View
IXYX30N170CV1	IXYS, IGBT 1700V 108A 937W Through Hole PLUS247™-3, XPT™	View
FGAF40S65AQ	ON Semiconductor, IGBT Trench Field Stop 650V 80A 94W Through Hole TO-3PF-3,	View
IXBH40N160	IXYS, IGBT 1600V 33A 350W Through Hole TO-247AD (IXBH), BIMOSFET™	View
IKW25N120T2FKSA1	Infineon Technologies, IGBT Trench 1200V 50A 349W Through Hole PG-TO247-3, TrenchStop®	View
IXBK75N170	IXYS, IGBT 1700V 200A 1040W Through Hole TO-264, BIMOSFET™	View
RGT8NS65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S),	View

STGB30H60DLFB

Part NumberSTGB30H60DLFB