Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	STGB4M65DF2 Datasheet
Standard Package	1
Manufacturer	STMicroelectronics
Series	M
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	8A
Current - Collector Pulsed (Icm)	16A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Power - Max	68W
Switching Energy	40µJ (on), 136µJ (off)
Input Type	Standard
Gate Charge	15.2nC
Td (on/off) @ 25°C	12ns/86ns
Test Condition	400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr)	133ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK

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HGTG11N120CND	ON Semiconductor, IGBT NPT 1200V 43A 298W Through Hole TO-247-3,	View
IXBH32N300	IXYS, IGBT 3000V 80A 400W Through Hole TO-247AD (IXBH), BIMOSFET™	View
STGWT20H65FB	STMicroelectronics, IGBT Trench Field Stop 650V 40A 168W Through Hole TO-3P,	View
IXYA50N65C3	IXYS, IGBT PT 650V 130A 600W Surface Mount TO-263, GenX3™, XPT™	View
IKW50N60DTPXKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 80A 319.2W Through Hole PG-TO247-3, TrenchStop™	View
APT35GN120L2DQ2G	Microsemi Corporation, IGBT NPT, Trench Field Stop 1200V 94A 379W Through Hole,	View
IGW50N60H3FKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 100A 333W Through Hole PG-TO247-3, TrenchStop®	View
STGW80V60DF	STMicroelectronics, IGBT Trench Field Stop 600V 120A 469W Through Hole TO-247,	View
IXBT20N300HV	IXYS, IGBT 3000V 50A 250W Surface Mount TO-268, BIMOSFET™	View
STGW40H120F2	STMicroelectronics, IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247,	View
IRG4PSC71KDPBF	Infineon Technologies, IGBT 600V 85A 350W Through Hole SUPER-247™ (TO-274AA),	View

STGB4M65DF2

Part NumberSTGB4M65DF2