Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	STGD4M65DF2 Datasheet
Standard Package	1
Manufacturer	STMicroelectronics
Series	M
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	8A
Current - Collector Pulsed (Icm)	16A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Power - Max	68W
Switching Energy	40µJ (on), 136µJ (off)
Input Type	Standard
Gate Charge	15.2nC
Td (on/off) @ 25°C	12ns/86ns
Test Condition	400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr)	133ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK

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IKW20N60TFKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 40A 166W Through Hole PG-TO247-3, TrenchStop®	View
DGTD65T15H2TF	Diodes Incorporated, IGBT Field Stop 650V 30A 48W Through Hole ITO-220AB,	View
RGT8TM65DGC9	Rohm Semiconductor, IGBT Trench Field Stop 650V 5A 16W Through Hole TO-220NFM,	View
IGB50N65H5ATMA1	Infineon Technologies, IGBT Trench Field Stop 650V 80A 270W Surface Mount PG-TO263-3, TrenchStop™ 5	View
IRG4PF50WPBF	Infineon Technologies, IGBT 900V 51A 200W Through Hole TO-247AC,	View
SGS10N60RUFDTU	ON Semiconductor, IGBT 600V 16A 55W Through Hole TO-220F,	View
STGB15M65DF2	STMicroelectronics, IGBT Trench Field Stop 650V 30A 136W Surface Mount D2PAK,	View
IXGP20N120A3	IXYS, IGBT PT 1200V 40A 180W Through Hole TO-220AB, GenX3™	View
IRGP4650D-EPBF	Infineon Technologies, IGBT 600V 76A 268W Through Hole TO-247AD,	View
APT35GP120BG	Microsemi Corporation, IGBT PT 1200V 96A 543W Through Hole TO-247 [B], POWER MOS 7®	View
APT200GN60B2G	Microsemi Corporation, IGBT Trench Field Stop 600V 283A 682W Through Hole,	View

STGD4M65DF2

Part NumberSTGD4M65DF2