Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	STGW10M65DF2 Datasheet
Standard Package	1200
Manufacturer	STMicroelectronics
Series	M
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	20A
Current - Collector Pulsed (Icm)	40A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 10A
Power - Max	115W
Switching Energy	120µJ (on), 270µJ (off)
Input Type	Standard
Gate Charge	28nC
Td (on/off) @ 25°C	19ns/91ns
Test Condition	400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr)	96ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

FGY40T120SMD	ON Semiconductor, IGBT Trench Field Stop 1200V 80A 882W Through Hole TO-247,	View
IXEL40N400	IXYS, IGBT 4000V 90A 380W Through Hole ISOPLUSi5-Pak™,	View
STGB30H60DLFB	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK,	View
RGT16NL65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 16A 94W Surface Mount LPDS,	View
STGB15M65DF2	STMicroelectronics, IGBT Trench Field Stop 650V 30A 136W Surface Mount D2PAK,	View
STGP30V60DF	STMicroelectronics, IGBT Trench Field Stop 600V 60A 258W Through Hole TO-220,	View
IRGB30B60KPBF	Infineon Technologies, IGBT NPT 600V 78A 370W Through Hole TO-220AB,	View
STGY50NC60WD	STMicroelectronics, IGBT 600V 110A 278W Through Hole MAX247™, PowerMESH™	View
IRG4PSC71KDPBF	Infineon Technologies, IGBT 600V 85A 350W Through Hole SUPER-247™ (TO-274AA),	View
HGTD1N120BNS9A	ON Semiconductor, IGBT NPT 1200V 5.3A 60W Surface Mount TO-252AA,	View
IXBH40N160	IXYS, IGBT 1600V 33A 350W Through Hole TO-247AD (IXBH), BIMOSFET™	View
RGPZ10BM40FHTL	Rohm Semiconductor, IGBT 460V 20A 107W Surface Mount TO-252, Automotive, AEC-Q101	View

STGW10M65DF2

Part NumberSTGW10M65DF2