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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH320N4F6-2,-6
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 15V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2PAK-6
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
BSS138-TP
Micro Commercial Co, N-Channel 50V 220mA 350mW Surface Mount SOT-23,
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IRFP240PBF
Vishay Siliconix, N-Channel 200V 20A (Tc) 150W (Tc) Through Hole TO-247-3,
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SI7810DN-T1-E3
Vishay Siliconix, N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
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R6015ANX
Rohm Semiconductor, N-Channel 600V 15A (Ta) 50W (Tc) Through Hole TO-220FM,
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SISA72ADN-T1-GE3
Vishay Siliconix, N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV
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IPB180N04S401ATMA1
Infineon Technologies, N-Channel 40V 180A (Tc) 188W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™
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SI3430DV-T1-GE3
Vishay Siliconix, N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP,
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IPB80N04S403ATMA1
Infineon Technologies, N-Channel 40V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
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FDPF5N60NZ
ON Semiconductor, N-Channel 600V 4.5A (Tc) 33W (Tc) Through Hole TO-220F, UniFET-II™
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IRLML6244TRPBF
Infineon Technologies, N-Channel 20V 6.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
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STD7LN80K5
STMicroelectronics, N-Channel 800V 5A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™
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IRF8301MTRPBF
Infineon Technologies, N-Channel 30V 34A (Ta), 192A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT, HEXFET®
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