STH3N150-2


STH3N150-2

Part NumberSTH3N150-2

Manufacturer

Description

Datasheet

Package / CaseTO-263-3, D²Pak (2 Leads + Tab) Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

STH3N150-2 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerSTMicroelectronics
SeriesPowerMESH™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1500V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29.3nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds939pF @ 25V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab) Variant

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