Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4160DY-T1-GE3

SI4160DY-T1-GE3

SI4160DY-T1-GE3

Part NumberSI4160DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 25.4A 8-SOIC

DatasheetSI4160DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 25.4A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO

To learn about the specification of SI4160DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4160DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4160DY-T1-GE3.
We are offering SI4160DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4160DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4160DY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	25.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2071pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4160DY-T1-GE3 - Related Products

	STD110N8F6	STMicroelectronics, N-Channel 80V 80A (Tc) 167W (Tc) Surface Mount DPAK, STripFET™ F6	View
	PSMN4R5-40PS,127	Nexperia USA Inc., N-Channel 40V 100A (Tc) 148W (Tc) Through Hole TO-220AB,	View
	TK14G65W,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Surface Mount D2PAK, DTMOSIV	View
	STW28N60M2	STMicroelectronics, N-Channel 600V 24A (Tc) 170W (Tc) Through Hole TO-247, MDmesh™ II Plus	View
	IRF520SPBF	Vishay Siliconix, N-Channel 100V 9.2A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D2PAK,	View
	FDD120AN15A0	ON Semiconductor, N-Channel 150V 2.8A (Ta), 14A (Tc) 65W (Tc) Surface Mount DPAK, PowerTrench®	View
	FQD19N10LTM	ON Semiconductor, N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®	View
	TSM60NB190CZ C0G	Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 33.8W (Tc) Through Hole TO-220,	View
	SI1032R-T1-GE3	Vishay Siliconix, N-Channel 20V 140mA (Ta) 250mW (Ta) Surface Mount SC-75A, TrenchFET®	View
	TSM126CX RFG	Taiwan Semiconductor Corporation, N-Channel 600V 30mA (Tc) 500mW (Ta) Surface Mount SOT-23,	View
	TSM033NA04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 141A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6),	View
	BSC042NE7NS3GATMA1	Infineon Technologies, N-Channel 75V 19A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View

SI4160DY-T1-GE3 - Tags

SI4160DY-T1-GE3 SI4160DY-T1-GE3 PDF SI4160DY-T1-GE3 datasheet SI4160DY-T1-GE3 specification SI4160DY-T1-GE3 image SI4160DY-T1-GE3 India Renesas Electronics India SI4160DY-T1-GE3 buy SI4160DY-T1-GE3 SI4160DY-T1-GE3 price SI4160DY-T1-GE3 distributor SI4160DY-T1-GE3 supplier SI4160DY-T1-GE3 wholesales