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STP11NM60ND

STP11NM60ND

Part NumberSTP11NM60ND

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 600V 10A TO-220

DatasheetSTx11NM60ND

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 10A (Tc) 90W (Tc) Through Hole TO-220AB

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STP11NM60ND - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STx11NM60ND
Standard Package	50
Manufacturer	STMicroelectronics
Series	FDmesh™ II
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 50V
FET Feature	-
Power Dissipation (Max)	90W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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