STP8NK100Z
STP8NK100Z
Part Number STP8NK100Z Description MOSFET N-CH 1000V 6.5A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 6.5A (Tc) 160W (Tc) Through Hole TO-220AB
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STP8NK100Z - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet ST(F,P)8NK100Z Standard Package 50 Manufacturer STMicroelectronics Series SuperMESH™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.85Ohm @ 3.15A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 25V FET Feature - Power Dissipation (Max) 160W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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