STQ1HNK60R-AP
STQ1HNK60R-AP
Part Number STQ1HNK60R-AP
Description MOSFET N-CH 600V 400MA TO-92
Package / Case TO-226-3, TO-92-3 (TO-226AA)
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Lead Time To be Confirmed
Detailed Description N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
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STQ1HNK60R-AP - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx1(H)NK60(-1,R)
Standard Package 2000
Manufacturer STMicroelectronics
Series SuperMESH™
Packaging Tape & Box (TB)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 25V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
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