STW27N60M2-EP
STW27N60M2-EP
Part Number STW27N60M2-EP Description MOSFET N-CH 600V 20A TO-220 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3
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STW27N60M2-EP - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet ST(P,W)27N60M2-EP Datasheet Standard Package 30 Manufacturer STMicroelectronics Series MDmesh™ M2-EP Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 163mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 100V FET Feature - Power Dissipation (Max) 170W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3
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