Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ STW27N60M2-EP

STW27N60M2-EP

STW27N60M2-EP

Part NumberSTW27N60M2-EP

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 600V 20A TO-220

DatasheetST(P,W)27N60M2-EP Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3

To learn about the specification of STW27N60M2-EP, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add STW27N60M2-EP with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of STW27N60M2-EP.
We are offering STW27N60M2-EP for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

STW27N60M2-EP - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	ST(P,W)27N60M2-EP Datasheet
Standard Package	30
Manufacturer	STMicroelectronics
Series	MDmesh™ M2-EP
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1320pF @ 100V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

STW27N60M2-EP - Related Products

	IRF6795MTRPBF	Infineon Technologies, N-Channel 25V 32A (Ta), 160A (Tc) 2.8W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX, HEXFET®	View
	AON7296	Alpha & Omega Semiconductor Inc., N-Channel 100V 5A (Ta), 12.5A (Tc) 3.1W (Ta), 20.8W (Tc) Surface Mount 8-DFN (3x3),	View
	TK560P60Y,RQ	Toshiba Semiconductor and Storage, N-Channel 600V 7A (Tc) 60W (Tc) Surface Mount DPAK, DTMOSV	View
	CSD18542KTT	Texas Instruments, N-Channel 60V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	BSC520N15NS3GATMA1	Infineon Technologies, N-Channel 150V 21A (Tc) 57W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	SIR882DP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SIA106DJ-T1-GE3	Vishay Siliconix, N-Channel 60V 10A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET® Gen IV	View
	TPN8R903NL,LQ	Toshiba Semiconductor and Storage, N-Channel 30V 20A (Tc) 700mW (Ta), 22W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H	View
	IXFA80N25X3	IXYS, N-Channel 250V 80A (Tc) 390W (Tc) Surface Mount TO-263AA, HiPerFET™	View
	PSMN013-30MLC,115	Nexperia USA Inc., N-Channel 30V 39A (Tc) 38W (Tc) Surface Mount LFPAK33,	View
	IRF3205STRLPBF	Infineon Technologies, N-Channel 55V 110A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	FDD1600N10ALZ	ON Semiconductor, N-Channel 100V 6.8A (Tc) 14.9W (Tc) Surface Mount TO-252, (D-Pak), PowerTrench®	View

STW27N60M2-EP - Tags

STW27N60M2-EP STW27N60M2-EP PDF STW27N60M2-EP datasheet STW27N60M2-EP specification STW27N60M2-EP image STW27N60M2-EP India Renesas Electronics India STW27N60M2-EP buy STW27N60M2-EP STW27N60M2-EP price STW27N60M2-EP distributor STW27N60M2-EP supplier STW27N60M2-EP wholesales