STW27N60M2-EP
STW27N60M2-EP
Part Number STW27N60M2-EP
Description MOSFET N-CH 600V 20A TO-220
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3
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STW27N60M2-EP - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet ST(P,W)27N60M2-EP Datasheet
Standard Package 30
Manufacturer STMicroelectronics
Series MDmesh™ M2-EP
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 100V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
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