Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ STW27N60M2-EP

STW27N60M2-EP

STW27N60M2-EP

Part NumberSTW27N60M2-EP

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 600V 20A TO-220

DatasheetST(P,W)27N60M2-EP Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3

To learn about the specification of STW27N60M2-EP, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add STW27N60M2-EP with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of STW27N60M2-EP.
We are offering STW27N60M2-EP for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

STW27N60M2-EP - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	ST(P,W)27N60M2-EP Datasheet
Standard Package	30
Manufacturer	STMicroelectronics
Series	MDmesh™ M2-EP
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1320pF @ 100V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

STW27N60M2-EP - Related Products

	TK14N65W,S1F	Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-247, DTMOSIV	View
	IPS70R900P7SAKMA1	Infineon Technologies, N-Channel 700V 6A (Tc) 30.5W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	TPW4R50ANH,L1Q	Toshiba Semiconductor and Storage, N-Channel 100V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance, U-MOSVIII-H	View
	NX3008NBKMB,315	Nexperia USA Inc., N-Channel 30V 530mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	SSM6K341NU,LF	Toshiba Semiconductor and Storage, N-Channel 60V 6A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVIII-H	View
	IRLZ14PBF	Vishay Siliconix, N-Channel 60V 10A (Tc) 43W (Tc) Through Hole TO-220AB,	View
	IPB65R045C7ATMA2	Infineon Technologies, N-Channel 650V 46A (Tc) 227W (Tc) Surface Mount PG-TO263-3, CoolMOS™ C7	View
	ZVN4525ZTA	Diodes Incorporated, N-Channel 250V 240mA (Ta) 1.2W (Ta) Surface Mount SOT-89-3,	View
	R8005ANJFRGTL	Rohm Semiconductor, N-Channel 800V 5A (Tc) 120W (Tc) Surface Mount LPTS, Automotive, AEC-Q101	View
	TSM2318CX RFG	Taiwan Semiconductor Corporation, N-Channel 40V 3.9A (Ta) 1.25W (Ta) Surface Mount SOT-23,	View
	SSM3K16FU,LF	Toshiba Semiconductor and Storage, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSVI	View
	SI7820DN-T1-E3	Vishay Siliconix, N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View

STW27N60M2-EP - Tags

STW27N60M2-EP STW27N60M2-EP PDF STW27N60M2-EP datasheet STW27N60M2-EP specification STW27N60M2-EP image STW27N60M2-EP India Renesas Electronics India STW27N60M2-EP buy STW27N60M2-EP STW27N60M2-EP price STW27N60M2-EP distributor STW27N60M2-EP supplier STW27N60M2-EP wholesales