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STW58N65DM2AG

STW58N65DM2AG

Part NumberSTW58N65DM2AG

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 650V 48A

DatasheetSTW58N65DM2AG

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 48A (Tc) 360W (Tc) Through Hole TO-247

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STW58N65DM2AG - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STW58N65DM2AG
Standard Package	30
Manufacturer	STMicroelectronics
Series	Automotive, AEC-Q101, MDmesh™ DM2
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 100V
FET Feature	-
Power Dissipation (Max)	360W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

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