SUD50N04-8M8P-4GE3
SUD50N04-8M8P-4GE3
Part Number SUD50N04-8M8P-4GE3
Description MOSFET N-CH 40V 14A TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 14A (Ta), 50A (Tc) 3.1W (Ta), 48.1W (Tc) Surface Mount TO-252, (D-Pak)
To learn about the specification of SUD50N04-8M8P-4GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SUD50N04-8M8P-4GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SUD50N04-8M8P-4GE3.
We are offering SUD50N04-8M8P-4GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SUD50N04-8M8P-4GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SUD50N04-8M8P
Standard Package 2500
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 20V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 48.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N04-8M8P-4GE3 - Related ProductsMore >>
FDD8447L
ON Semiconductor, N-Channel 40V 15.2A (Ta), 50A (Tc) 3.1W (Ta), 44W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
View
IPD036N04LGBTMA1
Infineon Technologies, N-Channel 40V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
TN5325K1-G
Microchip Technology, N-Channel 250V 150mA (Ta) 360mW (Ta) Surface Mount TO-236AB (SOT23),
View
IXFH26N60P
IXYS, N-Channel 600V 26A (Tc) 460W (Tc) Through Hole TO-247AD (IXFH), PolarHV™
View
TK58E06N1,S1X
Toshiba Semiconductor and Storage, N-Channel 60V 58A (Ta) 110W (Tc) Through Hole TO-220, U-MOSVIII-H
View
IRF3205LPBF
Infineon Technologies, N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-262, HEXFET®
View
FDB86360-F085
ON Semiconductor, N-Channel 80V 110A (Tc) 333W (Tc) Surface Mount D²PAK (TO-263AB), Automotive, AEC-Q101, PowerTrench®
View
STB11NK40ZT4
STMicroelectronics, N-Channel 400V 9A (Tc) 110W (Tc) Surface Mount D2PAK, SuperMESH™
View
APT37M100B2
Microsemi Corporation, N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2],
View
DMN4800LSSQ-13
Diodes Incorporated, N-Channel 30V 8.6A (Ta) 1.46W (Ta) Surface Mount 8-SO, Automotive, AEC-Q101
View
FQPF32N20C
ON Semiconductor, N-Channel 200V 28A (Tc) 50W (Tc) Through Hole TO-220F, QFET®
View
SIHB30N60AEL-GE3
Vishay Siliconix, N-Channel 600V 28A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak), EL
View
SUD50N04-8M8P-4GE3 - Tags