SIS106DN-T1-GE3
SIS106DN-T1-GE3
Part Number SIS106DN-T1-GE3
Description MOSFET N-CHAN 60V POWERPAK 1212-
Package / Case PowerPAK® 1212-8S
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SIS106DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS106DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS106DN-T1-GE3.
We are offering SIS106DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIS106DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIS106DN
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 30V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 24W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Package / Case PowerPAK® 1212-8S
SIS106DN-T1-GE3 - Related ProductsMore >>
SIR872DP-T1-GE3
Vishay Siliconix, N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount, TrenchFET®
View
SIR696DP-T1-GE3
Vishay Siliconix, N-Channel 125V 60A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®
View
RUF025N02TL
Rohm Semiconductor, N-Channel 20V 2.5A (Ta) 320mW (Ta) Surface Mount TUMT3,
View
SPD06N80C3ATMA1
Infineon Technologies, N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™
View
ZXMN3A14FTA
Diodes Incorporated, N-Channel 30V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3,
View
SI7414DN-T1-GE3
Vishay Siliconix, N-Channel 60V 5.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
IPW65R099C6FKSA1
Infineon Technologies, N-Channel 650V 38A (Tc) 278W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
CMUDM7004 TR
Central Semiconductor Corp, N-Channel 30V 450mA (Ta) 250mW (Ta) Surface Mount SOT-523,
View
SIHF28N60EF-GE3
Vishay Siliconix, N-Channel 600V 28A (Tc) 39W (Tc) Through Hole TO-220 Full Pack,
View
HUF75545S3ST
ON Semiconductor, N-Channel 80V 75A (Tc) 270W (Tc) Surface Mount D²PAK (TO-263AB), UltraFET™
View
FQT1N80TF-WS
ON Semiconductor, N-Channel 800V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3, QFET®
View
STWA48N60DM2
STMicroelectronics, N-Channel 600V 40A (Tc) 300W (Tc) Through Hole TO-247 Long Leads, MDmesh™ DM2
View
SIS106DN-T1-GE3 - Tags