SUD50P06-15-GE3
SUD50P06-15-GE3
Part Number SUD50P06-15-GE3 Description MOSFET P-CH 60V 50A TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 50A (Tc) 2.5W (Ta), 113W (Tc) Surface Mount TO-252, (D-Pak)
To learn about the specification of SUD50P06-15-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SUD50P06-15-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SUD50P06-15-GE3.
We are offering SUD50P06-15-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SUD50P06-15-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package 2000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 17A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4950pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 113W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50P06-15-GE3 - Related ProductsMore >>
PMV50EPEAR Nexperia USA Inc., P-Channel 30V 4.2A (Ta) 310mW (Ta), 455mW (Tc) Surface Mount TO-236AB,
View
SI7157DP-T1-GE3 Vishay Siliconix, P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IRFR9010TRLPBF Vishay Siliconix, P-Channel 50V 5.3A (Tc) 25W (Tc) Surface Mount D-Pak,
View
VP2206N3-G Microchip Technology, P-Channel 60V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3,
View
2SJ661-1E ON Semiconductor, P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Through Hole TO-262-3,
View
SSM3J36FS,LF Toshiba Semiconductor and Storage, P-Channel 20V 330mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSIII
View
VP0106N3-G Microchip Technology, P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
SI4425BDY-T1-GE3 Vishay Siliconix, P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
SSM3J133TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
DMP2040UFDF-7 Diodes Incorporated, P-Channel 20V 13A (Tc) 1.8W (Ta) Surface Mount U-DFN2020-6 (Type F),
View
DMP3105LVT-7 Diodes Incorporated, P-Channel 30V 3.1A (Ta) 1.15W (Ta) Surface Mount TSOT-23-6,
View
SI2321-TP Micro Commercial Co, P-Channel 20V 2.9A (Ta) 350mW (Ta) Surface Mount SOT-23,
View
SUD50P06-15-GE3 - Tags
English
