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SUP85N10-10-GE3

SUP85N10-10-GE3

Part NumberSUP85N10-10-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 85A TO220AB

DatasheetSUP/SUB85N10-10

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole

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SUP85N10-10-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SUP/SUB85N10-10
Standard Package	500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6550pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.75W (Ta), 250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3

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