TK28N65W,S1F

Part NumberTK28N65W,S1F

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK28N65W
Standard Package	30
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	110mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 300V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

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