Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN10H170SVTQ
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1167pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSOT-26
Package / Case	SOT-23-6 Thin, TSOT-23-6

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IPN70R1K5CEATMA1	Infineon Technologies, N-Channel 700V 5.4A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™	View
IRFR24N15DTRPBF	Infineon Technologies, N-Channel 150V 24A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®	View
CPH3456-TL-W	ON Semiconductor, N-Channel 20V 3.5A (Ta) 1W (Ta) Surface Mount 3-CPH,	View
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IXFN160N30T	IXYS, N-Channel 300V 130A (Tc) 900W (Tc) Chassis Mount SOT-227B, GigaMOS™	View
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DMN10H170SVTQ-7

Part NumberDMN10H170SVTQ-7