SIHG018N60E-GE3
SIHG018N60E-GE3
Part Number SIHG018N60E-GE3 Description MOSFET N-CHAN 650V TO247AC Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 99A (Tc) 524W (Tc) Through Hole TO-247AC
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SIHG018N60E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SiHG018N60E Standard Package 500 Manufacturer Vishay Siliconix Series E Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 99A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 25A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 228nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7612pF @ 100V FET Feature - Power Dissipation (Max) 524W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3
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