BSP125H6327XTSA1
BSP125H6327XTSA1
Part Number BSP125H6327XTSA1 Description MOSFET N-CH 600V 120MA SOT-223 Package / Case TO-261-4, TO-261AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
To learn about the specification of BSP125H6327XTSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSP125H6327XTSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSP125H6327XTSA1.
We are offering BSP125H6327XTSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSP125H6327XTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSP125 Standard Package 1 Manufacturer Infineon Technologies Series SIPMOS® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V Vgs(th) (Max) @ Id 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA
BSP125H6327XTSA1 - Related ProductsMore >>
SIR680DP-T1-RE3 Vishay Siliconix, N-Channel 80V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
BSS138W ON Semiconductor, N-Channel 50V 210mA (Ta) 340mW (Ta) Surface Mount SC-70 (SOT323),
View
FDB120N10 ON Semiconductor, N-Channel 100V 74A (Tc) 170W (Tc) Surface Mount D²PAK, PowerTrench®
View
TN2435N8-G Microchip Technology, N-Channel 350V 365mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
IRF510SPBF Vishay Siliconix, N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,
View
IPD33CN10NGATMA1 Infineon Technologies, N-Channel 100V 27A (Tc) 58W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
TPH2R608NH,L1Q Toshiba Semiconductor and Storage, N-Channel 75V 150A (Tc) 142W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
View
SSM3K72KFS,LF Toshiba Semiconductor and Storage, N-Channel 60V 300mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSVII-H
View
IRF7451TRPBF Infineon Technologies, N-Channel 150V 3.6A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
IRFBG30PBF Vishay Siliconix, N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB,
View
TSM900N10CP ROG Taiwan Semiconductor Corporation, N-Channel 100V 15A (Tc) 50W (Tc) Surface Mount TO-252, (D-Pak),
View
SI1032X-T1-GE3 Vishay Siliconix, N-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3, TrenchFET®
View
BSP125H6327XTSA1 - Tags
English
