TK290P65Y,RQ
TK290P65Y,RQ
Part Number TK290P65Y,RQ Description MOSFET N-CH 650V 11.5A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 11.5A (Tc) 100W (Tc) Surface Mount DPAK
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK290P65Y Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series DTMOSV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 290mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id 4V @ 450µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 730pF @ 300V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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