TK31J60W,S1VQ
TK31J60W,S1VQ
Part Number TK31J60W,S1VQ Description MOSFET N CH 600V 30.8A TO-3P(N) Package / Case TO-3P-3, SC-65-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N)
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TK31J60W,S1VQ - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK31J60W Standard Package 25 Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 88mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V FET Feature Super Junction Power Dissipation (Max) 230W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P(N) Package / Case TO-3P-3, SC-65-3
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