TK31V60W5,LVQ
TK31V60W5,LVQ
Part Number TK31V60W5,LVQ Description MOSFET N -CH 600V 30.8A DFN Package / Case 4-VSFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
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TK31V60W5,LVQ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK31V60W5 Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 109mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V FET Feature - Power Dissipation (Max) 240W (Tc) Operating Temperature 150°C (TA) Mounting Type Surface Mount Supplier Device Package 4-DFN-EP (8x8) Package / Case 4-VSFN Exposed Pad
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