TK31V60W5,LVQ


TK31V60W5,LVQ

Part NumberTK31V60W5,LVQ

Manufacturer

Description

Datasheet

Package / Case4-VSFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TK31V60W5,LVQ - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package2500
ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSIV
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs109mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 300V
FET Feature-
Power Dissipation (Max)240W (Tc)
Operating Temperature150°C (TA)
Mounting TypeSurface Mount
Supplier Device Package4-DFN-EP (8x8)
Package / Case4-VSFN Exposed Pad

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TK31V60W5,LVQ - Tags

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