TK31V60W5,LVQ
TK31V60W5,LVQ
Part Number TK31V60W5,LVQ
Description MOSFET N -CH 600V 30.8A DFN
Package / Case 4-VSFN Exposed Pad
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
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TK31V60W5,LVQ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK31V60W5
Standard Package 2500
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 109mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V
FET Feature -
Power Dissipation (Max) 240W (Tc)
Operating Temperature 150°C (TA)
Mounting Type Surface Mount
Supplier Device Package 4-DFN-EP (8x8)
Package / Case 4-VSFN Exposed Pad
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