TK33S10N1Z,LQ
TK33S10N1Z,LQ
Part Number TK33S10N1Z,LQ Description MOSFET N-CH 100V 33A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 33A (Ta) 125W (Tc) Surface Mount DPAK+
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TK33S10N1Z,LQ - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK33S10N1Z Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 33A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.7mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 10V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK+ Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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