TP2635N3-G
TP2635N3-G
Part Number TP2635N3-G Description MOSFET P-CH 350V 0.18A TO92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 350V 180mA (Tj) 1W (Ta) Through Hole TO-92-3
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TP2635N3-G - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TP2635 Standard Package 1000 Manufacturer Microchip Technology Series - Packaging Bulk Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 350V Current - Continuous Drain (Id) @ 25°C 180mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 15Ohm @ 300mA, 10V Vgs(th) (Max) @ Id 2V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)
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