TP2635N3-G
TP2635N3-G
Part Number TP2635N3-G
Description MOSFET P-CH 350V 0.18A TO92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
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Lead Time To be Confirmed
Detailed Description P-Channel 350V 180mA (Tj) 1W (Ta) Through Hole TO-92-3
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TP2635N3-G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TP2635
Standard Package 1000
Manufacturer Microchip Technology
Series -
Packaging Bulk
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 350V
Current - Continuous Drain (Id) @ 25°C 180mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 15Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
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