Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPC6111
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	40mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 10V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VS-6 (2.9x2.8)
Package / Case	SOT-23-6 Thin, TSOT-23-6

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SI2303CDS-T1-E3	Vishay Siliconix, P-Channel 30V 2.7A (Tc) 2.3W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
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SI3473CDV-T1-GE3	Vishay Siliconix, P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
TSM3457CX6 RFG	Taiwan Semiconductor Corporation, P-Channel 30V 5A (Ta) 2W (Ta) Surface Mount SOT-26,	View
SSM6J216FE,LF	Toshiba Semiconductor and Storage, P-Channel 12V 4.8A (Ta) 700mW (Ta) Surface Mount ES6, U-MOSVI	View
RTE002P02TL	Rohm Semiconductor, P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3,	View
DMP2045UFY4-7	Diodes Incorporated, P-Channel 20V 4.7A (Ta) 670mW (Ta) Surface Mount X2-DFN2015-3,	View
SI1441EDH-T1-GE3	Vishay Siliconix, P-Channel 20V 4A (Tc) 2.8W (Tc) Surface Mount SOT-363, TrenchFET®	View
NTZS3151PT1G	ON Semiconductor, P-Channel 20V 860mA (Ta) 170mW (Ta) Surface Mount SOT-563,	View
IXTX32P60P	IXYS, P-Channel 600V 32A (Tc) 890W (Tc) Through Hole PLUS247™-3, PolarP™	View
VP0109N3-G	Microchip Technology, P-Channel 90V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,	View

TPC6111(TE85L,F,M)

Part NumberTPC6111(TE85L,F,M)