TPH2R506PL,L1Q
TPH2R506PL,L1Q
Part Number TPH2R506PL,L1Q
Description X35 PB-F POWER MOSFET TRANSISTOR
Package / Case 8-PowerVDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 100A (Tc) 132W (Tc) Surface Mount 8-SOP Advance (5x5)
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TPH2R506PL,L1Q - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPH2R506PL
Standard Package 5000
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5435pF @ 30V
FET Feature -
Power Dissipation (Max) 132W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
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