TPH3207WS
TPH3207WS
Part Number TPH3207WS Description GANFET N-CH 650V 50A TO247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 50A (Tc) 178W (Tc) Through Hole TO-247-3
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TPH3207WS - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPH3207WS Datasheet Standard Package 30 Manufacturer Transphorm Series - Packaging Tube Part Status Last Time Buy FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 41mOhm @ 32A, 8V Vgs(th) (Max) @ Id 2.65V @ 700µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 8V Vgs (Max) ±18V Input Capacitance (Ciss) (Max) @ Vds 2197pF @ 400V FET Feature - Power Dissipation (Max) 178W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3
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